Preparation and Characterization of High Quality Bi1-xSbx Thin Films: A Sputtering Deposition Approach

Abstract

The Bi1-xSbx was the first 3D topological insulator found in nature. It presents a complex electronic structure with topological to trivial transition and a semimetallic to semiconductor transition, both achieved by changing the x fraction of Sb. The complex nature of this system may lead to several electronic and topological phases in matter, making it a promising quantum material. Here, we focused on preparing very high-quality thin films samples of Bi1-xSbx with varying fraction of x using the Co-deposition Magnetron Sputtering technique. Our results demonstrate that high-quality samples, with compact and uniform morphology, presenting a preferential direction of growth, can be obtained over SiO2 substrate. Our findings suggest a dependence between the thin films crystalline texture and the composition of the samples, as well as the deposition temperature.

6 pages and 6 figures

References in corpus (5)

• A topological Dirac insulator in a quantum spin Hall phase : Experimental observation of first strong topological insulator
• Tunable Giant Spin Hall Conductivities in a Strong Spin-Orbit Semimetal: Bi${}_{1-x}$Sb${}_x$
• Linear and quadratic magnetoresistance in the semimetal SiP2
• Magneto-transport and Berry phase in magnetically doped Bi${}_{0.97-x}$Sb${}_{0.03}$ single crystals
• Epitaxial growth and characterization of Bi${}_{1-x}$Sb${}_x$ thin films on (0001) sapphire substrates