Steering of Sub-GeV positrons by ultra-thin bent Silicon crystal for ultra slow extraction applications

Abstract

For the first time at the Beam Test Facility of the DAΦNE accelerator complex at the Laboratori Nazionali di Frascati of INFN, 450 MeV positrons have been deflected with high efficiency, using the Planar Channeling process in a bent silicon crystal. The deflection angle obtained is beyond 1 mrad. This interesting result finds several applications for manipulation of this kind of beams, in particular for slow extraction from leptons circular accelerators like DAΦNE. In this work the experimental apparatus, the measurement procedure and the experimental results are reported.

Author list corrected. Title modified. Changed text of abstract and in sections 2 and 5 Added references. Typos corrected