Chip-integrated extended-cavity mode-locked laser in the visible

Abstract

Mode-locked lasers are of interest for applications such as biological imaging, non-linear frequency conversion, and single-photon generation. In the infrared, chip-integrated mode-locked lasers have been demonstrated through integration of laser diodes with low-loss photonic circuits. However additional challenges, such as a higher propagation loss and smaller alignment tolerances have prevented the realization of such lasers in the visible range. Here, we demonstrate the first chip-integrated mode-locked diode laser in the visible using an integrated photonic circuit for cavity extension. Based on a gallium arsenide gain chip and a low-loss silicon nitride feedback circuit, the laser is passively mode-locked using a saturable absorber implemented by focused ion beam milling. At a center wavelength of 642 nm, the laser shows an average output power of 3.4 mW, with a spectral bandwidth of 1.5 nm at a repetition rate of 7.84 GHz.

7 pages, 4 figures

References in corpus (7)

• Fully integrated ultra-low power Kerr comb generation
• Sagnac interference in integrated photonics for reflection mirrors, gyroscopes, filters, and wavelength interleavers
• Integrated Single Photon Emitters
• Hybrid integrated mode-locked laser diodes with a silicon nitride extended cavity
• Widely-tunable and narrow-linewidth hybrid-integrated diode laser at 637 nm
• Two-photon rubidium clock detecting 776~nm fluorescence
• Analysis of a Cesium lattice optical clock