Sub-terahertz field emission transistors with selfpackaged microcavities

Abstract

This paper presents the design of a vertical structure terahertz field emission transistor that utilizes a high-angle oblique deposition method to form a self-packaged vacuum microcavity. The simulation demonstrates that the self-packaged microcavity can effectively mitigate the potential impact of conventional field emission transistors on surrounding solid-state circuits, thereby improving the frequency performance and stability of the device. The proposed design exhibits a cutoff frequency at the sub-terahertz level.

Achieving reliable simulation of closed new domain formation processes using a single phase-field method is unconvincing and requires the use of multiple algorithms for parallel comparison with experiments