Forming and Compliance-free Operation of Low-energy, Fast-switching HfO${}_x$S${}_y$/HfS${}_2$ Memristors

Abstract

We demonstrate low energy, forming and compliance-free operation of a resistive memory obtained by the partial oxidation of a two-dimensional layered van-der-Waals semiconductor: hafnium disulfide (HfS${}_2$). Semiconductor - oxide heterostructures are achieved by low temperature ($<300^o$C) thermal oxidation of HfS${}_2$ in dry conditions, carefully controlling process parameters. The resulting HfO${}_x$S${}_y$/HfS${}_2$ heterostructures are integrated between metal contacts, forming vertical crossbar devices. Forming-free, compliance-free resistive switching between non-volatile states is demonstrated by applying voltage pulses and measuring the current response in time. We show non-volatile memory operation with an R${}_{ON}$/ R${}_{OFF}$ of 102, programmable by 80ns WRITE and ERASE operations. Multiple stable resistance states are achieved by modulating pulse width and amplitude, down to 60ns, $<$ 20pJ operation. This demonstrates the capability of these devices for low - energy, fast-switching and multi-state programming. Resistance states were retained without fail at 150${}^o$C over 10${}^4$s, showcasing the potential of these devices for long retention times and resilience to ageing. Low-energy resistive switching measurements were repeated in vacuum (8.6 mbar) showing unchanged characteristics and no dependence of the device on surrounding oxygen or water vapour. Using a technology computer-aided design (TCAD) tool, we explore the role of the semiconductor layer in tuning the device conductance and driving gradual resistive switching in 2D HfO${}_x$ - based devices.