Understanding the transport behaviour of PbSe: A combined experimental and computational study
arXiv:2408.03786
Abstract
Lead chalcogenides are the promising thermoelectric (TE) materials having narrow band gap. The present work investigates the TE behaviour of PbSe in the temperature range 300-500 K. The transport properties of the sample have been studied using the Abinit and BoltzTrap code. The experimentally observed value of \textit{S} at 300 and 500 K is found to be 198 and 266 V K, respectively. The rate of increase in \emph{S} from 300 to 460 (460 to 500) K is found to be 0.4 (0.09). The temperature dependent electrical conductivity \textit{()} shows the increasing trend, with values of 0.35 10 and 0.58 10 m at 300 and 500 K, respectively. Further, the value of thermal conductivity \textit{()} at 300 (500) K is found to be 0.74 (1.07) W m K. The value of \textit{} is found to be increasing upto 460 K and then starts decreasing. The dispersion plot indicates that PbSe is a direct band gap semiconductor with band gap value of 0.16 (0.27) eV considering spin-orbit coupling (without SOC). The partial density of states (PDOS) plot shows that Pb 6p and Se 4p states have a major contribution in the transport properties. The observed and calculated values of \textit{S} gives a good match for SOC case. The calculated \textit{} and electronic part of thermal conductivity (\textit{}) gives good match with the experimental data. The maximum power factor (PF) value of 4.3 10 W/mK is observed at 500 K. This work helps in understanding the TE behaviour of PbSe through a novel and insightful alliance of experimental measurements and DFT approach.