Enhancement of piezoelectric properties in a narrow cerium doping range of ${\text{Ba}}_{1-x}{\text{Ca}}_x{\text{Ti}}_{1-y}{\text{Zr}}_y{\text{O}}_3$ evidenced by high throughput experiment

Abstract

Lead-free materials based on the ${\text{(Ba,Ca)(Zr,Ti)O}}_3$ (BCZT) system exhibit excellent electromechanical properties that can be strongly modified by small amounts of dopants. Here, we use a high throughput strategy to unravel the influence of aliovalent doping with Ce on dielectric and piezoelectric properties of BCTZ. We synthesize and characterize a single BCTZ thin film with a composition gradient from undoped to 0.2 mol % cerium doping. The cerium doping increases the piezoelectric coefficient from $42.3\pm 2.9{\text{pm V}}^{-1}$ (undoped) to $63\pm 2.4{\text{pm V}}^{-1}$ for 0.06 Ce-mol\%, and then decreases to $38.4\pm 1.3{\text{pm V}}^{-1}$ for the maximum amount of cerium (0.2 mol %). An investigation of sub-coercive field non-linearities reveal that these variations are not only induced by changes in dynamics and densities of domain walls. The results highlight the advantage of high throughput techniques to identify ideal compositions for applications, without synthesizing a high number of samples with unavoidable sample-to-sample variations.

References in corpus (1)

• Strategies to Improve the Energy Storage Properties of Perovskite Lead-Free Relaxor Ferroelectrics: A Review