Incorporating static intersite correlation effects in vanadium dioxide through DFT$+V$

Abstract

We analyze the effects on the structural and electronic properties of vanadium dioxide (VO${}_2$) of adding an empirical inter-atomic potential within the density-functional theory$+V$ (DFT$+V$) framework. We use the DFT$+V$ machinery founded on the extended Hubbard model to apply an empirical self-energy correction between nearest-neighbor vanadium atoms in both rutile and monoclinic phases, and for a set of structures interpolating between these two cases. We observe that imposing an explicit intersite interaction $V$ along the vanadium-vanadium chains enhances the characteristic bonding-antibonding splitting of the relevant bands in the monoclinic phase, thus favoring electronic dimerization and the formation of a band gap. We then explore the effect of $V$ on the structural properties and the relative energies of the two phases, finding an insulating global energy minimum for the monoclinic phase, consistent with experimental observations. With increasing $V$, this minimum becomes deeper relative to the rutile structure, and the transition from the metallic to the insulating state becomes sharper. We also analyze the effect of applying the $+V$ correction either to all or only to selected vanadium-vanadium pairs, and both in the monoclinic as well as in the metallic rutile phase. Our results suggest that DFT$+V$ can indeed serve as a computationally inexpensive unbiased way of modeling VO${}_2$ which is well suited for studies that, e.g., require large system sizes.

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Cited by in corpus (2)

• Importance of ligand on-site interactions for the description of Mott-insulators in DFT+DMFT
• Explicit demonstration of the equivalence between DFT+U and the Hartree-Fock limit of DFT+DMFT