Giant and anisotropic enhancement of spin-charge conversion in double Rashba interface graphene-based quantum system

Abstract

The ever-increasing demand for efficient data storage and processing has fueled the search for novel memory devices. Spintronics offers an alternative fast and efficient solution using spin-to-charge interconversion. In this work, we demonstrate a remarkable thirty-four-fold increase in spin-to-charge current conversion when incorporating a 2D epitaxial graphene monolayer between iron and platinum layers by exploring spin-pumping on-chip devices. Furthermore, we find that the spin conversion is also anisotropic. We attribute this enhancement and anisotropy to the asymmetric Rashba contributions driven by an unbalanced spin accumulation at the differently hybridized top and bottom graphene interfaces, as highlighted by ad-hoc first-principles theory. The improvement in spin-to-charge conversion as well as its anisotropy reveals the importance of interfaces in hybrid 2D-thin film systems opening up new possibilities for engineering spin conversion in 2D materials, leading to potential advances in memory, logic applications, or unconventional computing.

33 pages with double-spaced paragraphs. 23 pages without references. 4 figures and one extended figure. Supplementary information, not shown, contains 21 pages and 23 supplementary figures

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Cited by in corpus (2)

• Spin and Orbital Rashba response in ferroelectric polarized PtSe${}_2$/MoSe${}_2$/LiNbO${}_3$ heterostructures
• RF field characterization and rectification effects in spin pumping and spin-torque FMR for spin-orbitronics