paper

The transition-metal-dichalcogenide family as a superconductor tuned by charge density wave strength

arXiv:2405.12548

Abstract

Metallic transition metal dichalcogenides (TMDs), consisting of H-NbSe, H-NbS, H-TaSe and H-TaS, remain superconducting down to a thickness of a single layer. In these materials, thickness affects a variety of properties, including Ising protection, two-band superconductivity, and the critical temperature , which decreases for the Nb-based, and increases for the Ta-based materials. This contradicting trend is puzzling, and has precluded the development of a unified theory. We approach the question of thickness-evolution of and the superconducting gap by measuring high-resolution tunneling spectra in TaS-based stacked devices. Our measurements allow for simultaneous evaluation of , , and the upper critical field . The latter, we find, is strongly enhanced towards the single-layer limit, following a proportionality ratio. Our main finding is that the same ratio holds for the entire family of metallic TMDs: TaS and NbSe of all thicknesses, bulk TaSe and bulk NbS, extending over 4 orders of magnitude in and covering both clean and dirty limits. We propose that this tunability across the TMD family is controlled by the competing charge density wave (CDW) phase. Using Gor'kov's theory, we calculate how a CDW order affects the quasiparticle density of states and the resulting and . Our results suggest that CDW is the key determinant factor limiting in the TMD family. They also show that is universally enhanced by a factor of two orders of magnitude above the expected value, an effect that remains an open question.

28 pages, 16 figures