On the Path to High-temperature Josephson Multi-junction Devices

Abstract

We report our progress in the high-temperature superconductor (HTS) Josephson junction fabrication process founded on using a focused helium ion beam damaging technique and discuss the expected device performance attainable with the HTS multi-junction device technology. Both the achievable high value of characteristic voltage $V_c=I_c{R}_N$ of Josephson junctions and the ability to design a large number of arbitrary located Josephson junctions allow narrowing the existing gap in design abilities for LTS and HTS circuits even with using a single YBCO film layer. A one-layer topology of active electrically small antenna is suggested and its voltage response characteristics are considered.

v2: accepted manuscript; 7 pages, 5 figures

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