Left-handedness with three zero-absorption windows tuned by the incoherent pumping field and inter-dot tunnelings in a GaAs/AlGaAs triple quantum dots system
arXiv:2403.12099 · doi:10.1088/0256-307X/32/5/058104
Abstract
Left-handedness with three zero-absorption windows is achieved in a triple-quantum dot (TQD) system. With the typical parameters of a GaAs/AlGaAs heterostructure, the simultaneous negative relative electric permittivity and magnetic permeability are obtained by the adjustable incoherent pumping field and two inter-dot tunnelings. What's more, three zero-absorption windows in the left-handedness frequency bands are observed in the TQD system. The left-handedness with zero-absorption in solid state heterostructure may solve not only the challenge in the photonic resonant scheme for left-handed materials (LHMs) but also the application limitation of the negative refractive materials with large amount of absorption.
arXiv comment5 pages, 4 figures
References in corpus (13)
- Prospects for Spin-Based Quantum Computing
- Coherent electronic transfer in quantum dot systems using adiabatic passage
- Coherent control of three-spin states in a triple quantum dot
- Self-Consistent Measurement and State Tomography of an Exchange-Only Spin Qubit
- Electromagnetically induced left-handedness in a dense gas of three level atoms
- Bipolar spin blockade and coherent state superpositions in a triple quantum dot
- Influence of the signal light on the transient optical properties of a four-level EIT medium
- Quantum interference and control of the optical response in quantum dot molecules
- Negative refraction without absorption via both coherent and incoherent fields in a four-level left-handed atomic system
- Theory of electronic properties and quantum spin blockade in a gated linear triple quantum dot with one electron spin each
- Left handness in a four-level atomic system
- Negative refraction with absorption suppressed by electromagneticly induced transparency in a left-handed atomic system
- Large and tunable negative refractive index via electromagnetically induced chirality in a semiconductor quantum well nanostructure