Direct microwave spectroscopy of Andreev bound states in planar Ge Josephson junctions

Abstract

We demonstrate microwave measurements of the Andreev bound state (ABS) spectrum in planar Josephson junctions (JJs) defined in Ge high mobility two-dimensional hole gases contacted by superconducting PtSiGe. The JJs and readout circuitry are located on separate chips and inductively coupled via flip-chip bonding. For a device with $350\mathrm{nm}$ junction length, spectroscopic signatures were consistent with the short-junction limit, with an induced superconducting gap $\hat{I}{”}^{\ast }\approx 48\hat{\mathrm{I}}¼\mathrm{eV}$ and transmission $\ddot{I}„\approx 0.94$. The interaction between the highest-transmission ABS and the resonator was well described by a Jaynes-Cummings model with a vacuum Rabi splitting of approximately $6\mathrm{MHz}$. A device with junction length of $1\hat{I}¼m$ showed an ABS spectrum consistent with a long junction model. Time-resolved monitoring of the readout resonator in the dispersive regime revealed gate-voltage tunable junction parity fluctuations on the timescale of seconds. Our work indicates a viable path towards hybrid quantum devices based on planar Ge.