The kagome Hubbard model from a functional renormalization group perspective

Abstract

The recent discovery of a variety of intricate electronic order in kagome metals has sprouted significant theoretical and experimental interest. From an electronic perspective on the potential microscopic origin of these phases, the most basic model is given by a Hubbard model on the kagome lattice. We employ functional renormalization group (FRG) to analyze the kagome Hubbard model. Through our methodological refinement of FRG both within its N-patch and truncated unity formulation, we resolve previous discrepancies of different FRG approaches (Wang et al., 2013 vs. Kiesel et al., 2013), and analyze both the pure ($p$-type) and mixed ($m$-type) van Hove fillings of the kagome lattice. We further study the RG flow into symmetry broken phases to identify the energetically preferred linear combination of the respective order parameter without any need for additional mean field analysis. Our findings suggest some consistency with recent experiments, and underline the richness of electronic phases already found in the kagome Hubbard model. We also provide a no-go theorem for a complex charge bond ordered phase in the single orbital kagome Hubbard model, suggesting that this model cannot capture aspects of orbital current phases.

8 pages, 5 figures

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• Theories for charge-driven nematicity in kagome metals
• Loop Current Order on the Kagome Lattice
• Fault-tolerant quantum simulation of generalized Hubbard models
• Nonequilibrium control of kagome metals
• Kohn-Luttinger-like mechanism for unconventional charge density waves
• Kekulé order from diffuse nesting near higher-order Van Hove points
• Magnetism of kagome metals $\left({\text{Fe}}_{1-x}{\text{Co}}_x\right)\text{Sn}$ studied by $\mu$SR
• Surface Functional Renormalization Group for Layered Quantum Materials
• Magnetic and electric properties of the metallic kagome antiferromagnet CrRhAs
• Theory of unconventional magnetism in a Cu-based kagome metal
• Spin bond order driven by extended repulsive interactions in doped graphene