Growth and Characterization of Superconducting Bulk Crystal [(SnSe)${}_{1+\delta }$]${}_m$(NbSe${}_2$) Misfit Layer Compounds

Abstract

[(SnSe)${}_{1+\delta }$]${}_m$(NbSe${}_2$) ($m$ = 1-6, 8, and 12) highly orientated crystals 1-2 mm in size and well-defined c-planes were successfully grown using CsCl/KCl flux, including the first growth of crystals with $m=12$. The stacked layers along the $c$ axis in the obtained crystals were directly observed by transmission electron microscopy as m alternating layers of SnSe and single layers of NbSe${}_2$. The superconducting transition temperature of the obtained [(SnSe)${}_{1+\delta }$]${}_m$(NbSe${}_2$) crystals decreased with an increase in the number of SnSe layers per unit cell. As the superconducting anisotropy parameters increase, a significant increase is observed between $m=4$ and 5. This indicates that the superconducting dimensionality becomes more two-dimensional with an increasing $m$.

References in corpus (4)

• Electric and magnetic characterization of NbSe2 single crystals: anisotropic superconducting fluctuations above Tc
• Misfit Layered Compounds: Unique, Tunable Heterostructured Materials with Untapped Properties
• Growth and superconducting anisotropies of F-substituted LaOBiSe2 single crystals
• Growth and anisotropy evaluation of NbBiCh${}_3$ (Ch = S, Se) misfit-layered superconducting single crystals

Cited by in corpus (1)

• Revisiting the physical properties of (LaS)1+d(NbS2) misfit-layered compounds