Horizontal flux growth as an efficient preparation method of CeRhAs single crystals
arXiv:2401.02372 · doi:10.1039/D3MH01351K
Abstract
We report on the efficient method of obtaining CeRhAs single crystals with the use of a bismuth flux growth method in a horizontal configuration. The crystals thus obtained exhibit much sharper phase transitions and distinctly higher characteristic temperatures and , compared to previous reports. Moreover, in our numerous attempts, we found this technique to be scalable and repeatable.
References in corpus (11)
- Topological crystalline superconductivity in locally noncentrosymmetric CeRhAs
- Observation of antiferromagnetic order as odd-parity multipoles inside the superconducting phase in CeRhAs
- Non-symmorphic symmetry and field-driven odd-parity pairing in CeRhAs
- Flux growth in a horizontal configuration: an analogue to vapor transport growth
- Two scenarios for superconductivity in CeRhAs
- Electronic and dynamical properties of CeRhAs: Role of RhAs layers and expected hidden orbital order
- Triplet pairing mechanisms from Hund's-Kondo models: applications to UTe and CeRhAs
- Even-odd parity transition in strongly correlated locally noncentrosymmetric superconductors : An application to CeRhAs
- Superconductivity in disordered locally noncentrosymmetric materials: an application to CeRhAs
- Two-dimensional XY-type Magnetic Properties of Locally Noncentrosymmetric Superconductor CeRhAs
- Violation of the Pauli-Clogston limit in a heavy Fermion superconductor CeRhAs --Duality of itinerant and localized 4f electrons--