Advanced Cd1-xMnxTe:Fe2+ semiconductor crystals with linear sin-band redshift of absorption and emission spectra

Abstract

Doped semiconductor crystals of solid solution $C{d}_{1-x}M{n}_{x}Te:F{e}^{2+}$ were grown by the high-pressure Bridgman method covering the range of its existence as a zinc blende crystal structure. The concentration of Fe-impurities was approximately 0.001 wt.% in all studied samples. The correlations between the composition of solid solution crystals of $C{d}_{1-x}M{n}_{x}Te:F{e}^{2+}$, band gap, lattice period and the maxima positions of the $F{e}^{2+}$ active ion absorption and emission spectra were found. A new theoretical model based on the principle of additivity for solid solution semiconductor materials has been used for explaining the long-wavelength ''redshift'' of absorption and luminescence bands in the spectra of $C{d}_{1-x}M{n}_{x}Te:F{e}^{2+}$ crystals with increasing solid solution concentration. The obtained results can be used to predict the lasing range for $C{d}_{1-x}M{n}_{x}Te:F{e}^{2+}$ crystal media (in all possible $Mn$ concentrations), which is potentially the longest wavelength active material for mid-IR lasing.

11 pages, 5 figures, 3 tables