Monolithic MHz-frame rate digital SiPM-IC with sub-100 ps precision and 70$\hat{I}¼$m pixel pitch

Abstract

This paper presents the design and characterization of a monolithic integrated circuit (IC) including digital silicon photomultipliers (dSiPMs) arranged in a 32$\times$32 pixel matrix at 70$\hat{I}¼$m pitch. The IC provides per-quadrant time stamping and hit-map readout, and is fabricated in a standard 150-nm CMOS technology. Each dSiPM pixel consists of four single-photon avalanche diodes (SPADs) sharing a quenching and subsequent processing circuitry and has a fill factor of 30$\%$. A sub-100 ps precision, 12-bit time-to-digital converter (TDC) provides timestamps per quadrant with an acquisition rate of 3 MHz. Together with the hit map, the total sustained data throughput of the IC amounts to 4 Gbps. Measurements obtained in a dark, temperature-stable environment as well as by using a pulsed laser environment show the full dSiPM-IC functionality. The dark-count rate (DCR) as function of the overvoltage and temperature, the TDC resolution, differential and integral nonlinearity (DNL/INL) as well as the propagation-delay variations across the matrix are presented. With aid of additional peripheral test structures, the main building blocks are characterized and key parameters are presented.

16 pages, 13 figures, 1 table