Purcell-Enhanced Single-Photon Emission in the Telecom C-Band

Abstract

Purcell-enhanced quantum dot single-photon emission in the telecom C-band from InAs quantum dots inside circular Bragg grating cavities is shown. The InAs quantum dots are grown by means of molecular beam epitaxy on an InP substrate and are embedded into a quaternary ${\mathrm{In}}_{0.53}{\mathrm{Al}}_{0.23}{\mathrm{Ga}}_{0.24}\mathrm{As}$ membrane structure. In a post-growth flip-chip process with subsequent substrate removal and electron beam-lithography, circular Bragg grating ("bullseye") resonators are defined. Micro-photoluminescence studies of the devices at cryogenic temperatures of T = 5 K reveal individual quantum dot emission lines into a pronounced cavity mode. Time-correlated single-photon counting measurements under above-band gap excitation yield Purcell-enhanced excitonic decay times of $\tau =(180\pm 3)$ ps corresponding to a Purcell factor of $F_P=(6.7\pm 0.6)$. Pronounced photon antibunching with a background limited $g^{(2)}(0)=(0.057\pm 0.004)$ is observed, which demonstrates that the light originated mostly from one single quantum dot.

8 pages, 5 figures

References in corpus (4)

• A solid-state entangled photon pair source with high brightness and indistinguishability
• Design study for an efficient semiconductor quantum light source operating in the telecom C-band based on an electrically-driven circular Bragg grating
• Numerical optimization of single-mode fiber-coupled single-photon sources based on semiconductor quantum dots
• On-demand indistinguishable and entangled photons using tailored cavity designs