Electrical engineering of topological magnetism in two-dimensional heterobilayers

Abstract

The emergence of topological magnetism in two-dimensional (2D) van der Waals (vdW) magnetic materials promoted 2D heterostructures as key building-blocks of devices for information technology based on topological concepts. Here, we demonstrate the all-electric switching of the topological nature of individual magnetic objects emerging in 2D vdW heterobillayers. We show from the first principles that an external electric field modifies the vdW gap between CrTe ${}_2$ and (Rh, Ti)Te${}_2$ layers and alters the underlying magnetic interactions. This enables switching between ferromagnetic skyrmions and meron pairs in the CrTe${}_2$/RhTe${}_2$ heterobilayer while it enhances the stability of frustrated antiferromagnetic merons in the CrTe${}_2$/TiTe${}_2$ heterobilayer. We envision that the electrical engineering of distinct topological magnetic solitons in a single device could pave the way for novel energy-efficient mechanisms to store and transmit information with applications in spintronics.