Valence-transition-induced changes of the electronic structure in EuPd${}_2$Si${}_2$

Abstract

We present results of hard X-ray angle-resolved photoemission spectroscopy and photoemission diffraction measurements performed on high-quality single crystals of the valence transition compound EuPd${}_2$Si${}_2$ for temperatures 25~K $\le$ T $\le$ 300~K. At low temperatures we observe a Eu $4f$ valence $v=2.5$, % occupation number $n=6.5$, which decreases to $v=2.1$ for temperatures above the valence transition around $T_V\approx 160$~K. The experimental valence numbers resulting from an evaluation of the Eu(III)/Eu(II) $3d$ core levels, are used for calculating band structures using density functional theory. The valence transition significantly changes the band structure as determined by angle-resolved photoemission spectroscopy. In particular, the Eu $5d$ valence bands are shifted to lower binding energies with increasing Eu $4f$ occupancy. To a lesser extent, bands derived from the Si $3p$ and Pd $4d$ orbitals are also affected. This observation suggests a partial charge transfer between Eu and Pd/Si sites. Comparison with {\it ab-initio} theory shows a good agreement with experiment, in particular concerning the unequal band shift with increasing Eu $4f$ occupancy.