paper

Investigation of Phonon Lifetimes and Magnon-Phonon Coupling in YIG/GGG Hybrid Magnonic Systems in the Diffraction Limited Regime

arXiv:2308.06896 · doi:10.1063/5.0189742

Abstract

Quantum memories facilitate the storage and retrieval of quantum information for on-chip and long-distance quantum communications. Thus, they play a critical role in quantum information processing and have diverse applications ranging from aerospace to medical imaging fields. Bulk acoustic wave (BAW) phonons are one of the most attractive candidates for quantum memories because of their long lifetime and high operating frequency. In this work, we establish a modeling approach that can be broadly used to design hybrid magnonic high-overtone bulk acoustic wave resonator (HBAR) structures for high-density, long-lasting quantum memories and efficient quantum transduction devices. We illustrate the approach by investigating a hybrid magnonic system, where BAW phonons are excited in a gadolinium iron garnet (GGG) thick film via coupling with magnons in a patterned yttrium iron garnet (YIG) thin film. We present theoretical and numerical analyses of the diffraction-limited BAW phonon lifetimes, modeshapes, and their coupling strengths to magnons in planar and confocal YIG/GGG HBAR structures. We utilize Fourier beam propagation and Hankel transform eigenvalue problem methods and discuss the effectiveness of the two methods to predict the HBAR phonons. We discuss strategies to improve the phonon lifetimes, since increased lifetimes have direct implications on the storage times of quantum states for quantum memory applications. We find that ultra-high, diffraction-limited, cooperativities and phonon lifetimes on the order of ~10^5 and ~10 milliseconds, respectively, could be achieved using a CHBAR structure with 10mum lateral YIG dimension. Additionally, the confocal HBAR structure will offer more than 100-fold improvement of integration density. A high integration density of on-chip memory or transduction centers is naturally desired for high-density memory or transduction devices.

arXiv comment19 pages, 11 figures

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