Modulating Spin Current Induced Effective Damping in Heterostructures by a Systematic Variation in Resistivity of the Sputtered Deposited films
arXiv:2308.02939
Abstract
Utilizing the spin-induced pumping from a ferromagnet (FM) into a heavy metal (HM) under the ferromagnetic resonance (FMR) condition, we report an enhancement in effective damping in - W/Py bilayers by systematically varying resistivity () of -W films. Different resistivity ranging from 100 -cm to 1400 -cm with a thickness of 8 nm can be achieved by varying the argon pressure () during the growth by the method of sputtering. The coefficient of effective damping is observed to increase from 0.010 to 0.025 with , which can be modulated by . We observe a modest dependence of on the sputtering power () while keeping the constant. dependence on both and suggests that there exists a strong correlation between and . It is thus possible to utilize as a tuning parameter to regulate the , which can be advantageous for faster magnetization dynamics switching. The thickness dependence study of Py in the aforementioned bilayers manifests a higher spin mixing conductance () which suggests a strong spin pumping from Py into the -W layer. The effective spin current () is also evaluated by considering the spin-back flow in this process. Intrinsic spin mixing conductance () and spin diffusion length () of -W are additionally investigated using thickness variations in -W. Furthermore, the low-temperature study in -W/Py reveals an intriguing temperature dependence in which is quite different from of single Py layer and the enhancement in at low temperature can be attributed to the spin-induced pumping from Py layer into -W.