Transport evidence of the three-dimensional Dirac semimetal phase in doped $\hat{I}\pm$-Sn grown by molecular beam epitaxy

Abstract

We report the quantum transport properties of the $\hat{I}\pm$-Sn films grown on CdTe (001) substrates by molecular beam epitaxy. The $\hat{I}\pm$-Sn films are doped with phosphorus to tune the Fermi level and access the bulk state. Clear Shubnikov-de Haas oscillations can be observed below 30 K and a nontrivial Berry phase has been confirmed. A nearly spherical Fermi surface has been demonstrated by angle-dependent oscillation frequencies. In addition, the sign of negative magnetoresistance which is attributed to the chiral anomaly has also been observed. These results provide strong evidence of the three-dimensional Dirac semimetal phase in $\hat{I}\pm$-Sn.