Proximitized insulators from disordered superconductors
arXiv:2307.16602 · doi:10.1103/PhysRevB.108.014505
Abstract
We present an experimental study of bilayers of a disordered Ag metal layer close to the metal-insulator transition and an Indium Oxide film which is on the insulating side of the superconductor-insulator-transition. Our results show that superconducting fluctuations within the indium-oxide film, that proximitize the underlying metal layer, induce insulating rather than superconducting behavior. This is ascribed to suppression of density of states (due to the superconducting energy gap) for quasiparticles in the proximitized regions. Our results present a novel manifestation of the proximity effect phenomenon and provide important insight into the nature of the insulating phase of the disorder driven superconductor-insulator-transition.
6 pages, 4 figures
References in corpus (10)
- Electric Field Control of the LaAlO/SrTiO Interface Ground State
- Localization of preformed Cooper-pairs in disordered superconductors
- Nature of the superconductor-insulator transition in disordered superconductors
- Disorder-Induced Inhomogeneities of the Superconducting State Close to the Superconductor-Insulator Transition
- Localized Superconductivity in the Quantum-Critical Region of the Disorder-Driven Superconductor-Insulator Transition in TiN Thin Films
- Phase fluctuations in a strongly disordered s-wave superconductor close to the metal-insulator transition
- Quantum Metallicity on the High-Field Side of the Superconductor-Insulator Transition
- Compositional disorder and tranport peculiarities in the amorphous indium-oxides
- Thickness-tuned Superconductor-to-Insulator Transitions under magnetic field in a-NbSi
- Hyperactivated resistance in TiN films on the insulating side of the disorder-driven superconductor-insulator transition