Quantum Valley and Sub-valley Hall Effect in the Large Angle Twisted Bilayer Graphene

Abstract

We study the quantum valley Hall effect and related domain wall modes in twisted bilayer graphene at a large commensurate angle. Due to the quantum valley and sub-valley Hall effect, a small deviation from the commensurate angle generates two-dimensional conducting network patterns composed of one-dimensional domain wall conducting channels, which can induce non-Fermi liquid transport behavior within an accessible temperature range. The domain wall modes can be manipulated by using the layer shifting and external electric fields which, in turn, leads to the sub-valley Haldane and Semenoff masses on the domain wall modes. The large-angle twisted bilayer graphene and related materials can be a new setup to harness the quantum valley and sub-valley Hall effect with enhanced tunability.

3+5 figures; 1+0 tables; 4+5 pages

References in corpus (6)

• Flat Bands in Slightly Twisted Bilayer Graphene
• Topological confinement in bilayer graphene
• Electronic Highways in Bilayer Graphene
• Valley-Hall Kink and Edge States in Multilayer Graphene
• Tunable and giant valley-selective Hall effect in gapped bilayer graphene
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Cited by in corpus (5)

• Quantum Valley Hall effect without Berry curvature
• Electrically tunable correlated domain wall network in twisted bilayer graphene
• Emergence of flat bands in the quasicrystal limit of boron nitride twisted bilayers
• Topological domain-wall states from Umklapp scattering in twisted bilayer graphene
• Coupled-wire descriptions of unconventional quantum states in twisted nanostructures