Spin Hall magnetoresistance in Pt/Y$_{3}$Fe$_{5}$O$_{12}$ bilayers grown on Si and Gd$_{3}$Ga$_{5}$O$_{12}$ substrates

Kenta Fukushima; Kohei Ueda; Naoki Moriuchi; Takanori Kida; Masayuki Hagiwara; Jobu Matsuno

doi:10.1063/5.0124583

paper

Spin Hall magnetoresistance in Pt/Y $_{3}$ Fe $_{5}$ O $_{12}$ bilayers grown on Si and Gd $_{3}$ Ga $_{5}$ O $_{12}$ substrates

arXiv:2306.02575 · doi:10.1063/5.0124583

Abstract

We study spin Hall magnetoresistance (SMR) in Pt/ferrimagnetic insulator Y $_{3}$ Fe $_{5}$ O $_{12}$ (YIG) bilayers by focusing on crystallinity, magnetization, and interface roughness by controlling post-annealing temperatures. The SMR in the Pt/YIG grown on Si substrate is comparable to that grown on widely used Gd $_{3}$ Ga $_{5}$ O $_{12}$ substrate, indicating that the large SMR can be achieved irrespective to the crystallinity. We deduced the spin mixing conductance from the Pt thickness dependence of the SMR to find the high interface quality of the optimized Pt/YIG grown on Si in terms of spin current. We also clarified that the SMR correlates well with the magnetization, the interface roughness, and carrier density. These findings highlight that optimizing YIG properties is a key to control of magnetization by spin current, leading to the development of low power consumption spintronic device based on the magnetic insulator.

Spin Hall magnetoresistance in Pt/Y3​Fe5​O12​ bilayers grown on Si and Gd3​Ga5​O12​ substrates

Abstract

References in corpus (3)

Spin Hall magnetoresistance in Pt/Y $_{3}$ Fe $_{5}$ O $_{12}$ bilayers grown on Si and Gd $_{3}$ Ga $_{5}$ O $_{12}$ substrates