Preferential bond formation and interstitial/vacancy annihilation rate drive atomic clustering in gallium ion sputtered compound materials

Abstract

The investigation of chemical reactions during the ion irradiation is a frontier for the study of the ion-material interaction. In order to derive the contribution of bond formation to chemistry of ion produced nanoclusters, the valence electron energy loss spectroscopy (VEELS) was exploited to investigate the Ga${}^{+}$ ion damage in Al${}_2$O${}_3$, InP and InGaAs, where each target material has been shown to yield different process for altering the clustering of recoil atoms: metallic Ga, metallic In and InGaP clusters in Al${}_2$O${}_3$, InP and InGaAs respectively. Supporting simulations based on Monte Carlo and crystal orbital Hamiltonianindicate that the chemical constitution of cascade induced nano-precipitates is a result of a competition between interstitial/vacancy consumption rate and preferential bond formation.