Defects in Graphene : A Topological Description
arXiv:2304.08905 · doi:10.1103/PhysRevB.108.054101
Abstract
Specific types of spatial defects or potentials can turn monolayer graphene into a topological material. These topological defects are classified by a spatial dimension and they are systematically obtained from the Hamiltonian by means of its symbol , an operator which generalises the Bloch Hamiltonian and contains all topological information. This approach, when applied to Dirac operators, allows to recover the tenfold classification of insulators and superconductors. The existence of a stable -topology is predicted as a condition on the dimension , similar to the classification of defects in thermodynamic phase transitions. Kekule distortions, vacancies and adatoms in graphene are proposed as examples of such defects and their topological equivalence is discussed.
11 pages
References in corpus (11)
- The electronic properties of graphene
- Classification of topological insulators and superconductors in three spatial dimensions
- Topological Defects and Gapless Modes in Insulators and Superconductors
- Disorder Induced Localized States in Graphene
- Electron fractionalization in two-dimensional graphenelike structures
- Vacancy induced magnetism in graphene and graphene ribbons
- Modeling disorder in graphene
- Chiral Gauge Theory for Graphene
- Experimental evidence of chiral symmetry breaking in Kekulé-ordered graphene
- Role of pseudospin in quasiparticle interferences in epitaxial graphene probed by high-resolution scanning tunneling microscopy
- Index of Dirac operators and classification of topological insulators