Inducing Quantum Phase Transitions in Non-Topological Insulators Via Atomic Control of Sub-Structural Elements

Abstract

Topological insulators (TIs) are an important family of quantum materials that exhibit a Dirac point (DP) in the surface band structure but have a finite band gap in bulk. A large degree of spin-orbit interaction and low bandgap is a prerequisite for stabilizing DPs on selective atomically flat cleavage planes. Tuning of the DP in these materials has been suggested via modifications to the atomic structure of the entire system. Using the example of As${}_2$Te${}_3$ and ZnTe${}_5$, which are not TIs, we show that a quantum phase transition can be induced in atomically flat and stepped surfaces, for As${}_2$Te${}_3$ and ZrTe${}_5$, respectively. This is achieved by establishing a framework for controlling electronic properties that is focused on local perturbations at key locations that we call sub-structural elements (SSEs). We exemplify this framework through a novel method of isovalent sublayer anion doping and biaxial strain.

13 pages, 3 figures, 1 table

References in corpus (9)

• Dirac materials
• Ultra-thin Topological Insulator Bi2Se3 Nanoribbons Exfoliated by Atomic Force Microscopy
• Circular dichroism of emergent chiral stacking orders in quasi-one-dimensional charge density waves
• Observation and control of the weak topological insulator state in ZrTe5
• Hidden, entangled and resonating order
• Topological phase transition and phonon-space Dirac topology surfaces in ZrTe${}_5$
• Temperature dependence of the energy band gap in ZrTe${}_5$: implications for the topological phase
• Spin Current Density Functional Theory of the Quantum Spin-Hall Phase
• Inter-quintuple layer coupling and topological phase transitions in the chalcogenide topological insulators