Gallium Arsenide Optical Phased Array Photonic Integrated Circuit

Abstract

A 16-channel optical phased array is fabricated on a gallium arsenide photonic integrated circuit platform with a low-complexity process. Tested with a 1064 nm external laser, the array demonstrates 0.92° beamwidth, 15.3° grating-lobe-free steering range, and 12 dB sidelobe level. Based on a reverse biased p-i-n structure, component phase modulators are 3 mm long with DC power consumption of less than 5 $\mu$W and greater than 770 MHz electro-optical bandwidth. Individual 4-mm-long phase modulators based on the same structure demonstrate single-sided V$\pi \cdot$L modulation efficiency ranging from 0.5 V$\cdot$cm to 1.23 V$\cdot$cm when tested at wavelengths from 980 nm to 1360 nm.

15 pages, 2 tables, 13 figures. Submitted to Optics Express 2023-04-05

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