Rare observation of spin-gapless semiconducting characteristics and related band topology of quaternary Heusler alloy CoFeMnSn
arXiv:2303.08589 · doi:10.1039/D3TC03481J
Abstract
In this paper, we report the theoretical investigation and experimental realization of a new spin-gapless semiconductor (SGSs) compound CoFeMnSn belonging to the family of quaternary Heusler alloys. Through the use of several ground-state energy calculations, the most stable structure has been identified. Calculations of the spin-polarized band structure in optimized structure's reveals the SGS nature of the compound. The compound form in an ordered crystal structure and exhibit a high ferromagnetic transition temperature (T = 560 K), making the material excellent for room temperature applications. Adherence of saturation magnetization to the Slater-Pauling rule, together with the nearly temperature-independent resistivity, conductivity, and carrier concentration of the compound in the temperature regime 5300 K along with the low value of anomalous Hall conductivity (AHC) further confirms the SGS nature. Theoretical calculations also reveal the robustness of the SGS state due to lattice contraction and one can obtain a high value of intrinsic AHC using hole doping. Combined SGS and topological properties of the compound make CoFeMnSn suitable for spintronics and magneto-electronics devices.
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Cited by in corpus (4)
- Restructuring disorder: Transformation from the antiferromagnetic order in Fe2VSi to the ferromagnetic state in FeRuVSi by substitution of a non-magnetic element
- Randomness in atomic disorder and consequent squandering of spin-polarization in a ferromagnetically fragile quaternary Heusler alloy FeRuCrSi
- Disorder mediated fully compensated ferrimagnetic spin-gapless semiconducting behaviour in Cr3Al Heusler alloy
- CoRuTiGe: A Possible Spin Gapless Semiconductor