Anomalous Nernst effect in a ferrimagnetic nodal-line semiconductor Mn${}_3$Si${}_2$Te${}_6$

Abstract

In the ferrimagnetic nodal-line semiconductor Mn${}_3$Si${}_2$Te${}_6$, colossal magnetoresistance (CMR) arises below $T_{\mathrm{c}}=78$ K due to the interplay of magnetism and topological nodal-line fermiology. The Berry curvature associated with the topological nodal-line is expected to produce an anomalous Nernst effect. Here, we present sizable anomalous Nernst signal in Mn${}_3$Si${}_2$Te${}_6$ below $T_{\mathrm{c}}$. In the low-magnetic-field region where CMR is most apparent, the scaling ratio between the Nernst signal and magnetization is significantly enhanced compared to that in conventional magnetic materials. The enhanced Nernst effect and CMR likely share the same mechanisms, which are closely linked to the nodal-line topology.

6 pages, 4 figures

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Cited by in corpus (3)

• Switchable in-plane anomalous Hall effect by magnetization orientation in monolayer ${\mathrm{Mn}}_3{\mathrm{Si}}_2{\mathrm{Te}}_6$
• Impact of Thermal Effects on the Current-Tunable Electrical Transport in the Ferrimagnetic Semiconductor Mn${}_3$Si${}_2$Te${}_6$
• Nonequilibrium carrier and phonon dynamics in the ferrimagnetic semiconductor Mn${}_3$Si${}_2$Te${}_6$