Charge collection and efficiency measurements of the TJ-Monopix2 DMAPS in 180nm CMOS technology
arXiv:2301.13638 · doi:10.22323/1.420.0080
Abstract
Monolithic CMOS pixel detectors have emerged as competitive contenders in the field of high-energy particle physics detectors. By utilizing commercial processes they offer high-volume production of such detectors. A series of prototypes has been designed in a 180nm Tower process with depletion of the sensor material and a column-drain readout architecture. The latest iteration, TJ-Monopix2, features a large 2cm x 2cm matrix consisting of 512 x 512 pixels with 33.04um pitch. A small collection electrode design aims at low power consumption and low noise while the radiation tolerance for high-energy particle detector applications needs extra attention. With a goal to reach radiation tolerance to levels of MeV ncm of NIEL damage a modification of the standard process has been implemented by adding a low-dosed n-type silicon implant across the pixel in order to allow for homogeneous depletion of the sensor volume. Recent lab measurements and beam tests were conducted for unirradiated modules to study electrical characteristics and hit detection efficiency.
Conference proceedings for PIXEL2022 conference, submitted to PoS