Bismuth layer properties in the ultrathin Bi-FeNi multilayer films probed by spectroscopic ellipsometry

Abstract

Using wide-band (0.5-6.5 eV) spectroscopic ellipsometry we study ultrathin [Bi(0.6-2.5 nm)-FeNi(0.8,1.2 nm)]N multilayer films grown by rf sputtering deposition, where the FeNi layer has a nanoisland structure and its morphology and magnetic properties change with decreasing the nominal layer thickness. From the multilayer model simulations of the ellipsometric angles, Psi(omega) and Delta(omega), the complex (pseudo)dielectric function spectra of the Bi layer were extracted. The obtained results demonstrate that the Bi layer can possess the surface metallic conductivity, which is strongly affected by the morphology and magnetic properties of the nanoisland FeNi layer in the GMR-type Bi-FeNi multilayer structures.

6 pages, 4 figures

References in corpus (3)

• Localization Phenomena in Disordered Tantalum Films
• Localization effects in the disordered Ta interlayer of multilayer Ta-FeNi films: Evidence from dc transport and spectroscopic ellipsometry study
• Control of Mooij correlations at the nanoscale in the disordered metallic Ta - nanoisland FeNi multilayers

Cited by in corpus (1)

• Bi layer properties in the Bi-FeNi GMR-type structures probed by spectroscopic ellipsometry