Edge States of α-Bismuthene Nanostructures

Abstract

We present a systematic investigation of the edge states of two-dimensional α-bismuthene (α-Bi) structures self-assembled on HOPG substrates, using scanning tunnelling microscopy and scanning tunnelling spectroscopy. The measurements are carried out for 3ML, 5ML and 7ML thick Bi structures. Our spectroscopy studies reveal clear features at the edges of the 5ML and 7ML thick structures, and the positions of the edge states (ESs) coincide with the topographical step edges. In contrast, in 3ML structures the ESs appear to be absent and instead new states are sometimes observed, far from the topographical edge. These states are associated with a moiré pattern and result from strain-induced modulation of the topology. Our observations demonstrate the impact on the edge states of coupling to adjacent structures.

17 pages, 6 figures

References in corpus (7)

• Topological Insulators with Inversion Symmetry
• One-dimensional Topological Edge States of Bismuth Bilayers
• Edge and Interfacial States in a 2D Topological Insulator:Bi(111) Bilayer on Bi${}_2$Te${}_2$Se
• Functionalized Bismuth Films: Giant Gap Quantum Spin Hall and Valley-Polarized Quantum Anomalous Hall States
• Creation of Helical Dirac Fermions by Interfacing Two Gapped Systems of Ordinary Fermions
• One-Dimensional Edge States with Giant Spin Splitting in a Bismuth Thin Film
• Moiré Modulated Lattice Strain and Thickness-Dependent Lattice Expansion in Epitaxial Ultrathin Films of PdTe${}_2$

Cited by in corpus (4)

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• STM observation of the hinge-states of bismuth nanocrystals
• Quantized Thermal Hall Conductance and the Topological Phase Diagram of a Superconducting Bismuth Bilayer
• Moiré plane wave expansion model for scanning tunneling microscopy simulations of incommensurate two-dimensional materials