Scanning tunneling microscopy study of hidden phases in atomically thin 1T-TaS
arXiv:2212.13376 · doi:10.1007/s40042-023-00705-0
Abstract
Lower thermal stability due to thinning often leads to unprecedented hidden phases in low-dimensional materials. Such hidden phases can coexist or compete with preexisting electronic phases. We investigate hidden phases observed in atomically thin (6-8 layers) 1T-TaS with scanning tunneling microscopy. First, we can electrically induce a hidden stripe phase at room temperature. Such a uniaxial stripe phase has three equivalent orientations by breaking three-fold symmetry of 1T-TaS. We also reveal that the hidden stripe phase coexists with nearly commensurate charge-density-wave phase. Next, we observe that the emergent stripe phase spontaneously appears without any electric excitation on a tiny flake ( nm). Our findings may provide a plausible explanation for the previously observed phase transition and two-fold optical response in thin 1T-TaS devices at room temperature. Furthermore, the hidden stripe phase would be crucial to understand exotic CDW-related phenomena in 1T-TaS for potential applications.
6 pages, 5 figures
References in corpus (6)
- Possible strain induced Mott gap collapse in 1T-TaS
- Photocurrent Imaging of Multi-Memristive Charge Density Wave Switching in Two-Dimensional 1T-TaS2
- Thermally-Driven Charge-Density-Wave Transitions in 1T-TaS2 Thin-Film Devices: Prospects for GHz Switching Speed
- Realization of metallic state in 1T-TaS2 with persisting long-range order of charge density wave
- Thickness dependent charge density wave networks on thin 1T-TaS
- In-situ scanning tunneling microscopy observation of thickness-dependent air-sensitive layered materials and heterodevices