A Nanocryotron Memory and Logic Family
arXiv:2212.07953 · doi:10.1063/5.0144686
Abstract
The development of superconducting electronics based on nanocryotrons has been limited so far to few-device circuits, in part due to the lack of standard and robust logic cells. Here, we introduce and experimentally demonstrate designs for a set of nanocryotron-based building blocks that can be configured and combined to implement memory and logic functions. The devices were fabricated by patterning a single superconducting layer of niobium nitride and measured in liquid helium on a wide range of operating points. The tests show bit error rates with above margins up to MHz and the possibility of operating under the effect of a perpendicular mT magnetic field, with margins at MHz. Additionally, we designed and measured an equivalent delay flip-flop made of two memory cells to show the possibility of combining multiple building blocks to make larger circuits. These blocks may constitute a solid foundation for the development of nanocryotron logic circuits and finite-state machines with potential applications in the integrated processing and control of superconducting nanowire single-photon detectors.
Submitted for publication in the Applied Physics Letters special issue "Advances in Superconducting Logic", 8 pages, 5 figures
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