2D :a stable direct-bandgap semiconductor with record-breaking carrier mobility,
arXiv:2211.14863
Abstract
The Moore's law in the semiconducting industry has faltered as the three-dimensional (3D) Si-based transistors has approached their physical limit with the downscaling. The carrier mobility , critical to the device's performance, will be degraded when the thickness of Si is scaled into several nanometers. In contrast to the bulk counterpart, two-dimensional (2D) semiconductors can be scaled into atomic-layer thickness without dangling bonds, maintaining its intrinsic carrier mobility and going beyond the limits of Si-based electronics. Hence, the development of novel 2D semiconducting materials with high carrier mobility is the market demand as well as the scientific challenge. Here, we successfully designed 2D with planar hypercoordinate motif. It possesses the perfect planar skeleton with both pentacoordinate carbon and hexacoordinate boron moieties, which is the first reported material with such multi-hypercoordinate centers. Density functional theory (DFT) calculations prove that the monolayer has excellent structural and thermal stabilities as well as mechanical properties. Further investigations reveal that the monolayer has a strong ultrahigh Fermi velocity (), suitable direct bandgap (1.97 eV), and high optical absorption coefficient (). As a result, an unprecedented ultrahigh room-temperature carrier mobility () with strong anisotropy is discovered, making monolayer a revolutionary candidate for future electronic and photovoltaic applications.
16 pages, 4 figures, 1 table