Valley-polarized quantum anomalous Hall effect in van der Waals heterostructures based on monolayer jacutingaite family materials

Xudong Zhu; Yuqian Chen; Zheng Liu; Yulei Han; Zhenhua Qiao

paper

Valley-polarized quantum anomalous Hall effect in van der Waals heterostructures based on monolayer jacutingaite family materials

arXiv:2211.14109

Abstract

We numerically study the general valley polarization and anomalous Hall effect in van der Waals (vdW) heterostructures based on monolayer jacutingaite family materials Pt $_{2}$ AX $_{3}$ (A = Hg, Cd, Zn; X = S, Se, Te). We perform a systematic study on the atomic, electronic, and topological properties of vdW heterostructures composed of monolayer Pt $_{2}$ AX $_{3}$ and two-dimensional ferromagnetic insulators. We show that four kinds of vdW heterostructures exhibit valley-polarized quantum anomalous Hall phase, i.e., Pt $_{2}$ HgS $_{3}$ /NiBr $_{2}$ , Pt $_{2}$ HgSe $_{3}$ /CoBr $_{2}$ , Pt $_{2}$ HgSe $_{3}$ /NiBr $_{2}$ , and Pt $_{2}$ ZnS $_{3}$ /CoBr $_{2}$ , with a maximum valley splitting of 134.2 meV in Pt $_{2}$ HgSe $_{3}$ /NiBr $_{2}$ and sizable global band gap of 58.8 meV in Pt $_{2}$ HgS $_{3}$ /NiBr $_{2}$ . Our findings demonstrate an ideal platform to implement applications on topological valleytronics.