Disentangling lattice and electronic instabilities in the excitonic insulator candidate TaNiSe by nonequilibrium spectroscopy
arXiv:2211.08537 · doi:10.1103/PhysRevLett.130.106904
Abstract
TaNiSe is an excitonic insulator candidate showing the semiconductor/semimetal-to-insulator (SI) transition below = 326 K. However, since a structural transition accompanies the SI transition, deciphering the role of electronic and lattice degrees of freedom in driving the SI transition has remained controversial. Here, we investigate the photoexcited nonequilibrium state in TaNiSe using pump-probe Raman and photoluminescence (PL) spectroscopies. The combined nonequilibrium spectroscopic measurements of the lattice and electronic states reveal the presence of a photoexcited metastable state where the insulating gap is suppressed, but the low-temperature structural distortion is preserved. We conclude that electron correlations play a vital role in the SI transition of TaNiSe.
13 pages, 10 figures
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Cited by in corpus (10)
- Role of electron-phonon coupling in excitonic insulator candidate Ta2NiSe5
- A New Era of Excitonic Insulators
- Effect of photoinduced screening on the spectroscopic signature of exciton-phonon coupling
- Collective modes and Raman response in TaNiSe
- Hidden excitonic quantum states with broken time-reversal symmetry
- Ultrafast Raman thermometry in driven YBaCuO
- Identification of metastable lattice distortion free charge density wave at photoinduced interface via TRARPES
- Anomalous phonon Grüneisen parameters in semiconductor TaNiS
- Gate tuning of coupled electronic and structural phase transition in atomically thin TaNiSe
- Unveiling Excitonic Insulator Signatures in TaNiSe