Emergence of Layer Stacking Disorder in c-axis Confined MoTe
arXiv:2210.16390
Abstract
The layer stacking order in 2D materials strongly affects functional properties and holds promise for next generation electronic devices. In bulk, octahedral MoTe possesses two stacking arrangements, the Weyl semimetal T phase, and the higher-order topological insulator 1T' phase; however, it remains unclear if thin exfoliated flakes of MoTe follow the T, 1T', or an alternative stacking sequence. Here, we resolve this debate using atomic-resolution imaging within the transmission electron microscope. We find that the layer stacking in thin flakes of MoTe is highly disordered and pseudo-random, which we attribute to intrinsic confinement effects. Conversely, WTe, which is isostructural and isoelectronic to MoTe, displays ordered stacking even for thin exfoliated flakes. Our results are important for understanding the quantum properties of MoTe devices, and suggest that thickness may be used to alter the layer stacking in other 2D materials.
6 figures, 2 tables