Quantum Monte Carlo Study of Semiconductor Artificial Graphene Nanostructures
arXiv:2210.14696 · doi:10.1103/PhysRevB.108.L161114
Abstract
Semiconductor artificial graphene nanostructures where Hubbard model parameter can be of the order of 100, provide a highly controllable platform to study strongly correlated quantum many-particle phases. We use accurate variational and diffusion Monte Carlo methods to demonstrate a transition from antiferromagnetic to metallic phases for experimentally accessible lattice constant nm in terms of lattice site radius , for finite sized artificial honeycomb structures nanopatterned on GaAs quantum wells containing up to 114 electrons. By analysing spin-spin correlation functions for hexagonal flakes with armchair edges and triangular flakes with zigzag edges, we show that edge type, geometry and charge nonuniformity affect the steepness and the crossover value of the phase transition. For triangular structures, the metal-insulator transition is accompanied with a smoother edge polarization transition.
arXiv comment5 pages, 5 figures; references added, several system sizes added, typos corrected; abstract updated
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