Silicon $4π$ spectrometer for $β$-decay electrons with energies up to 3~MeV

I. E. Alexeev; S. V. Bakhlanov; E. A. Chmel; A. V. Derbin; I. S. Drachnev; I. M. Kotina; M. S. Mikulich; V. N. Muratova; N. V. Nyazova; D. A. Semenov; M. V. Trushin; E. V. Unzhakov

paper

Silicon $4 π$ spectrometer for $β$ -decay electrons with energies up to 3~MeV

arXiv:2210.13192

Abstract

We present a description of the originally developed $β$ -spectrometer consisting of two Si(Li)-detectors with sensitive area thickness above 8~mm and $4 π$ -geometry. The full absorption spectrometer allows for direct measurements of $β$ -spectra, disregarding the corrections to the response function induced by the electron backscattering from the crystal surface. In case of $β$ -spectra of transitions to the excited state of the daughter isotope additional 3" BGO-detector is used in order to detect the $γ$ -quanta in coincidence with the pair of Si(Li)-spectrometers.

9 pages, 7 figures

Silicon 4π spectrometer for β-decay electrons with energies up to 3~MeV

Abstract

Silicon $4 π$ spectrometer for $β$ -decay electrons with energies up to 3~MeV