Andreev-like Reflection in the Pfaffian Fractional Quantum Hall Effect
arXiv:2208.03336 · doi:10.7566/JPSJ.91.123703
Abstract
We studied the tunnel transport between the edge of a Pfaffian fractional quantum Hall state and that of an integer quantum Hall state. Based on the duality argument between the strong and weak tunnelings, we found that an Andreev-like reflection appeared in the strong tunneling regime. We calculated the charge conductance in the weak and strong tunneling regimes for the low-voltage limit. In the weak tunneling limit, $dI}/dV$ was proportional to with bias voltage and . By contrast, in the strong tunneling limit, was expressed by with a correction term. We expect that this condition can be realized experimentally at the point contact between a fractional quantum Hall state with and an integer quantum Hall state with .
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