Birefringence induced by antiferroelectric switching in transparent polycrystalline $PbZ{r}_{0.95}T{i}_{0.05}{O}_3$ film

Abstract

The most characteristic functional property of antiferroelectric materials is the possibility to induce a phase transition from a non-polar to a polar phase by an electric field. Here, we investigate the effect of this field-induced phase transition on the birefringence change of $PbZ{r}_{0.95}T{i}_{0.05}{O}_3$. We use a transparent polycrystalline $PbZ{r}_{0.95}T{i}_{0.05}{O}_3$ film grown on $PbTi{O}_3/Hf{O}_2/Si{O}_2$ with interdigitated electrodes to directly investigate changes in birefringence in a simple transmission geometry. In spite of the polycrystalline nature of the film and its moderate thickness, the field-induced transition produces a sizeable effect observable under a polarized microscope. The film in its polar phase is found to behave like a homogeneous birefringent medium. The time evolution of this field-induced birefringence provides information about irreversibilities in the antiferroelectric switching process and its slow dynamics. The change in birefringence has two main contributions, one that responds briskly (~ 0.5 s), and a slower one that rises and saturates over a period of as long as 30 minutes. Possible origins for this long saturation and relaxation times are discussed.

arXiv comment15 pages, 5 figures

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