Hydrodynamics, viscous electron fluid, and Wiedeman-Franz law in 2D semiconductors

Abstract

Considering theoretically the transition between hydrodynamic and ballistic regimes in 2D semiconductors, we show that electrons in high-mobility 2D GaAs are by far the best system for the direct observation of collective hydrodynamic effects even in bulk transport properties independent of complicated transport features in narrow constrictions and small systems where Gurzhi phenomena are typically studied experimentally. We predict a strong hydrodynamics-induced generic violation of the Wiedeman-Franz law in bulk 2D GaAs systems for mobilities as modest as $10^6{\mathrm{cm}}^2/Vs$ and densities $1$-$5\times 10^{11}{\mathrm{cm}}^{-2}$ in the temperature range of $T=1$-$40K$.

5 pages, 5 figures

References in corpus (6)

• Hydrodynamics of electrons in graphene
• Limit to 2D mobility in modulation-doped GaAs quantum structures: How to achieve a mobility of 100 millions
• Viscous magnetotransport and Gurzhi effect in bilayer electron system
• Understanding limits to mobility in ultra-high-mobility GaAs two-dimensional electron systems: The quest for 100 million cm${}^2$/Vs and beyond
• Diffusion of photo-excited holes in viscous electron fluid
• Interplay between phonon and impurity scattering in 2D hole transport

Cited by in corpus (2)

• Collective modes in interacting two-dimensional tomographic Fermi liquids
• Magnetic response of a two-dimensional viscous electron fluid