High conductivity from cross-band electron pairing in flat-band systems
arXiv:2207.05974 · doi:10.1103/PhysRevB.109.245118
Abstract
Electrons in condensed matter may transition into a variety of broken-symmetry phase states due to electron-electron interactions. Applying diverse mean-field approximations to the interaction term is arguably the simplest way to identify the phase states theoretically possible in a given setting. Here, we explore electron-electron attraction in a two-band system comprising symmetric conduction and valence bands touching each other at a single point. We assume a mean-field pairing between the electrons having opposite spins, momenta, and, in contrast to the conventional superconducting pairing, residing in opposite bands, i.e., having opposite energies. We show that electrons transition into a novel correlated ground state if and only if the bands are flat enough, i.e. the transition is impossible in the case of conventional parabolic bands. Although this state is not superconducting in the usual sense and does not exhibit a gap in its excitation spectrum, it is nevertheless immune to elastic scattering caused by any kind of disorder, and is therefore expected to exhibit high electric conductivity at low temperature, mimicking the behavior of a real superconductor. Having in mind the recent experimental realizations of flat-band electronic systems in twisted multilayers, we foresee an exciting opportunity for observing a new class of highly conductive materials.
arXiv comment12 pages strongly revised
References in corpus (27)
- Magic-angle graphene superlattices: a new platform for unconventional superconductivity
- Moire bands in twisted double-layer graphene
- Size, Shape and Low Energy Electronic Structure of Carbon Nanotubes
- Superfluidity in topologically nontrivial flat bands
- Band Structure of ABC-Stacked Graphene Trilayers
- Superfluidity and Quantum Geometry in Twisted Multilayer Systems
- Topology-Bounded Superfluid Weight In Twisted Bilayer Graphene
- Twisted Bilayer Graphene IV. Exact Insulator Ground States and Phase Diagram
- Tunable correlation-driven symmetry breaking in twisted double bilayer graphene
- Geometric and conventional contribution to superfluid weight in twisted bilayer graphene
- Twisted bilayer graphene III. Interacting Hamiltonian and exact symmetries
- Surface States of Topological Insulators
- Tunable van Hove Singularities and Correlated States in Twisted Trilayer Graphene
- Twisted bilayer graphene. II. Stable symmetry anomaly
- Twisted Bilayer Graphene V: Exact Analytic Many-Body Excitations in Twisted Bilayer Graphene Coulomb Hamiltonians: Charge Gap, Goldstone Modes and Absence of Cooper Pairing
- Correlated Insulator and Chern Insulators in Pentalayer Rhombohedral Stacked Graphene
- Quantum metric and effective mass of a two-body bound state in a flat band
- Fragile topology and flat-band superconductivity in the strong-coupling regime
- Inter-pocket pairing and gap symmetry in Fe-based superconductors with only electron pockets
- Twisted bilayer graphene.VI. An Exact Diagonalization Study of Twisted Bilayer Graphene at Non-Zero Integer Fillings
- Twisted bilayer graphene I. Matrix elements, approximations, perturbation theory and a 2-Band model
- Coulomb interaction, phonons, and superconductivity in twisted bilayer graphene
- Possible pairing states of the Fe-based superconductors
- TSTG I: Single-Particle and Many-Body Hamiltonians and Hidden Non-local Symmetries of Trilayer Moiré Systems with and without Displacement Field
- Friedel oscillations at the surfaces of rhombohedral -layer graphene
- Tightly bound excitons in two-dimensional semiconductors with a flat valence band
- Charge transport in two dimensions limited by strong short-range scatterers: Going beyond parabolic dispersion and Born approximation