Crystal and electronic structure of a quasi-two-dimensional semiconductor Mg$_3$Si$_2$Te$_6$

Chaoxin Huang; Benyuan Cheng; Yunwei Zhang; Long Jiang; Lisi Li; Mengwu Huo; Hui Liu; Xing Huang; Feixiang Liang; Lan Chen; Hualei Sun; Meng Wang

doi:10.1088/1674-1056/aca393

paper

Crystal and electronic structure of a quasi-two-dimensional semiconductor Mg $_{3}$ Si $_{2}$ Te $_{6}$

arXiv:2207.05936 · doi:10.1088/1674-1056/aca393

Abstract

We report the synthesis and characterization of a Si-based ternary semiconductor Mg $_{3}$ Si $_{2}$ Te $_{6}$ , which exhibits a quasi-two-dimensional structure, where the trigonal Mg $_{2}$ Si $_{2}$ Te $_{6}$ layers are separated by Mg ions. Ultraviolet-visible absorption spectroscopy and density functional theory calculations were performed to investigate the electronic structure. The experimentally determined direct band gap is 1.39 eV, consistent with the value of the density function theory calculations. Our results reveal that Mg $_{3}$ Si $_{2}$ Te $_{6}$ is a direct gap semiconductor with a relatively narrow gap, which is a potential candidate for infrared optoelectronic devices.

arXiv comment5 pages, 5 figures

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Gap and magnetic engineering via doping and pressure in tuning the colossal magnetoresistance in (Mn $_{1 - x}$ Mg $_{x}$ ) $_{3}$ Si $_{2}$ Te $_{6}$

Crystal and electronic structure of a quasi-two-dimensional semiconductor Mg3​Si2​Te6​

Abstract

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Cited by in corpus (1)

Crystal and electronic structure of a quasi-two-dimensional semiconductor Mg $_{3}$ Si $_{2}$ Te $_{6}$