Mesoscopic superconducting memory based on bistable magnetic textures
arXiv:2206.06816 · doi:10.1103/PhysRevResearch.4.033136
Abstract
With the ever-increasing energy need to process big data, the realization of low-power computing technologies, such as superconducting logic and memories, has become a pressing issue. Developing fast and non-volatile superconducting memory elements, however, remains a challenge. Superconductor-ferromagnet hybrid devices offer a promising solution, as they combine ultra-fast manipulation of spins with dissipationless readout. Here, we present a new type of non-volatile Josephson junction memory that utilizes the bistable magnetic texture of a single mesoscopic ferromagnet. We use micromagnetic simulations to design an ellipse-shaped planar junction structured from a Nb/Co bilayer. The ellipse can be prepared as uniformly magnetized or as a pair of vortices at zero applied field. The two states yield considerably different critical currents, enabling reliable electrical readout of the element. We describe the mechanism used to control the critical current by applying numerical calculations to quantify the local stray field from the ferromagnet, which shifts the superconducting interference pattern. By combining micromagnetic modeling with bistable spin-textured junctions, our approach presents a novel route towards realizing superconducting memory applications.
References in corpus (10)
- A spin triplet supercurrent through the half-metallic ferromagnet CrO2
- Magnetic Vortex Core Reversal by Excitation of Spin Waves
- Beyond Moore's technologies: operation principles of a superconductor alternative
- Ferromagnetic Josephson switching device with high characteristic voltage
- Vortex core switching by coherent excitation with single in-plane magnetic field pulses
- Boosting spintronics with superconductivity
- Spin-valve Josephson junctions with perpendicular magnetic anisotropy for cryogenic memory
- Superconducting triplet rim currents in a spin-textured ferromagnetic disk
- Miniaturization of the Superconducting Memory Cell via a Three-Dimensional Nb Nano-Superconducting Quantum Interference Device
- YBa2Cu3O7/LaXMnO3 (X: Ca, Sr) based Superconductor/Ferromagnet/Superconductor junctions with memory functionality